SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE USING SAME, AND DRIVING METHOD FOR SEMICONDUCTOR DEVICE

In order to provide a semiconductor device that has low loss performance and that enables stable dvCE/dt switching with respect to temperature and conduction conditions, this semiconductor device is composed of a dual-gate IGBT having a first gate terminal and a second gate terminal. During transiti...

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Bibliographische Detailangaben
Hauptverfasser:	MIYOSHI, Tomoyuki, SUZUKI, Hiroshi, TAKEUCHI, Yujiro, SHIRAISHI, Masaki, FURUKAWA, Tomoyasu
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION PULSE TECHNIQUE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In order to provide a semiconductor device that has low loss performance and that enables stable dvCE/dt switching with respect to temperature and conduction conditions, this semiconductor device is composed of a dual-gate IGBT having a first gate terminal and a second gate terminal. During transitioning from a non-conduction state of the dual-gate IGBT to a conduction state, a voltage of a threshold voltage or greater is applied to the first gate terminal at a first prescribed time which precedes the time for application to the second gate terminal. During transitioning from the conduction state of the dual-gate IGBT to the non-conduction state, a voltage that is below the threshold voltage is applied to the second gate terminal at a second prescribed time which precedes the time for application to the first gate terminal. The first and second prescribed times are variably controlled such that the change over time of the collector-emitter voltage of the dual-gate IGBT, which occurs during the transitioning from the non-conduction state to the conduction state and during the transitioning from the conduction state to the non-conduction state, is substantially consistent.