SEMICONDUCTOR LIGHT-EMITTING ELEMENT

A semiconductor light-emitting device includes a semiconductor light-emitting sequence which includes a first conductive type semiconductor layer, a second conductive type semiconductor layer and a light-emitting layer therebetween, a first electrode electrically connected to the first conductive type semiconductor layer, and a second electrode electrically connected to the second conductive type semiconductor layer. The first conductive type semiconductor layer includes an aluminum gallium indium phosphorus window layer as an ohmic contact layer forming contact between the first electrode and the first conductive type semiconductor layer. By selecting aluminum gallium indium phosphorous as the ohmic contact layer and the window layer at the first electrode side of the first conductive type semiconductor layer, instead of a conventional light-absorbing ohmic contact material, the light transmittance can be effectively improved.