A SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE OF A SEMICONDUCTOR DEVICE

A SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE OF A SEMICONDUCTOR DEVICE

This disclosure relates to a semiconductor device comprising a first n+ region, a first p+ region within the first n+ region, a second n+ region, a second p+ region, positioned between the first n+ region and the second n+ region. The first n+ region, the second n+ region and the second p+ region ar...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ritter, Hans-Martin, Holland, Steffen, Utzig, Joachim, Notermans, Guido, Vaddagere Nagaraju, Vasantha Kumar
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:This disclosure relates to a semiconductor device comprising a first n+ region, a first p+ region within the first n+ region, a second n+ region, a second p+ region, positioned between the first n+ region and the second n+ region. The first n+ region, the second n+ region and the second p+ region are positioned within a p- region. A first space charge region and a second space charge region are formed within the p- region. The first space region is positioned between the first n+ region and the second p+ region, and the second space region is positioned between the second p+ region and the second n+ region.