FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES

FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES

A method for forming a semiconductor structure (2902). Two isolation structures (2908) are formed in a semiconductor (2902). A cavity (1100, 1102, 1104, 2918) is etched in the semiconductor (2902) between the two isolation structures (2908) in the semiconductor (2902). Dopants are implanted into a b...

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Bibliographische Detailangaben
Hauptverfasser: CHOI, Maxwell Daehan, JACKSON, Clayton, CHAPPELL, James, JURA, Michael Pemberton, HA, Wonill, WRIGHT, Jeffrey Alden, SCHMITZ, Adele, LEE, Kangmu Min
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for forming a semiconductor structure (2902). Two isolation structures (2908) are formed in a semiconductor (2902). A cavity (1100, 1102, 1104, 2918) is etched in the semiconductor (2902) between the two isolation structures (2908) in the semiconductor (2902). Dopants are implanted into a bottom side of the cavity (1100, 1102, 1104, 2918) to form a doped region in the semiconductor (2902) below the cavity (1100, 1102, 1104, 2918) between the two isolation structures (2908). A contact is formed in the cavity (1100, 1102, 1104, 2918). The contact is on the doped region and in direct contact with the doped region.