WIDE BAND GAP SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING A JBS DIODE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND MANUFACTURING METHOD THEREOF

The vertical-conduction electronic power device (50) is formed by a body (55) of wide band gap semiconductor which has a first conductivity type and has a surface (55A), and is formed by a drift region (59) of the first conductivity type and by a plurality of surface portions (59A, 59B) delimited by...

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Bibliographische Detailangaben

1. Verfasser:	RASCUNA', Simone
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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