WIDE BAND GAP SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING A JBS DIODE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND MANUFACTURING METHOD THEREOF

The vertical-conduction electronic power device (50) is formed by a body (55) of wide band gap semiconductor which has a first conductivity type and has a surface (55A), and is formed by a drift region (59) of the first conductivity type and by a plurality of surface portions (59A, 59B) delimited by the surface. The electronic device is further formed by a plurality of first implanted regions (62) having a second conductivity type, which extend into the drift region from the surface, and by a plurality of first and second metal portions (215A, 216A), which are arranged on the surface. The first metal portions are in Schottky contact with first surface portions and the second metal portions are in Schottky contact with second surface portions so as to form first and second Schottky diodes (201, 202), wherein the first Schottky diodes have, at equilibrium, a lower Schottky barrier than the second Schottky diodes. The second metal portions are of a different material than the first metal portions. The first surface portions have a higher doping level than the second surface portions and are arranged at a smaller distance from a first implanted region than the second surface portions.