SEMICONDUCTOR DEVICE WITH COMPLEMENTARILY DOPED REGIONS AND METHOD OF MANUFACTURING

A first hard mask (410) is formed on a first surface (101) of a semiconductor body (100), wherein first openings (411) in the first hard mask (410) expose first surface sections (601) and second openings (412) expose second surface sections (602). Dopants of a first conductivity type are implanted selectively through the first openings (411) and dopants of a second conductivity type are implanted selectively through the second openings (412) into the semiconductor body (100). The first and second dopants have complementary conductivity types. A second hard mask (420) is formed that covers the first and second surface sections (601, 602), wherein third openings (421) in the second hard mask (420) expose third surface sections (603) and fourth openings (422) expose fourth surface sections (604). Dopants of the first conductivity type are implanted selectively through the third openings (421) and dopants of the second conductivity type are implanted selectively through the fourth openings (422) into the semiconductor body (100).