POLYCRYSTALLINE SILICON MATERIAL

This polycrystalline silicon material is for producing monocrystalline silicon and includes multiple polycrystalline silicon ingots, and is characterized in that, when the total concentration of donor elements present in a bulk of the polycrystalline silicon material is defined as Cd1 [ppta], the to...

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Bibliographische Detailangaben
Hauptverfasser:	ONODA Tooru, SAIKI Kouichi, ASANO Takuya, EMOTO Miki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	This polycrystalline silicon material is for producing monocrystalline silicon and includes multiple polycrystalline silicon ingots, and is characterized in that, when the total concentration of donor elements present in a bulk of the polycrystalline silicon material is defined as Cd1 [ppta], the total concentration of acceptor elements present in the bulk of the polycrystalline silicon material is defined as Ca1 [ppta], the total concentration of donor elements present in the surface of the polycrystalline silicon material is defined as Cd2 [ppta], and the total concentration of acceptor elements present in the surface of the polycrystalline silicon material is defined as Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy the relation 5 [ppta] ≤ (Ca1+Ca2)-(Cd1+Cd2) ≤ 26 [ppta].