APPARATUS AND METHOD FOR ATOMIC LAYER PROCESSING

The invention relates to an atomic layer processing apparatus (1) for atomic layer processing of an optical surface (4) of an optical element (2) preferably configured to reflect EUV radiation, the apparatus (1) comprising: a processing chamber (3), and at least one processing head (5) configured fo...

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Bibliographische Detailangaben
Hauptverfasser:	EHM, Dirk Heinrich, EIJNDEN, Edwin van den, CREIJGHTON, Yves Lodewijk Maria, SMELTINK, Jeroen, ROOZEBOOM, Fred, BECKER, Moritz, SCHMIDT, Stefan Wolfgang
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to an atomic layer processing apparatus (1) for atomic layer processing of an optical surface (4) of an optical element (2) preferably configured to reflect EUV radiation, the apparatus (1) comprising: a processing chamber (3), and at least one processing head (5) configured for atomic layer processing of the optical surface (4) of the optical element (2) within the processing chamber (3). The at least one processing head (5) is configured to perform atomic layer processing of a curved optical surface (4) of the optical element (2). The invention also relates to a method for atomic layer processing of an optical surface (4) of an optical element (2), preferably configured to reflect EUV radiation.