TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS

The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, tit...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BERGSTROM, Daniel, B, CHUN, Jin-Sung, PRADHAN, Sameer S, CHIU, Julia
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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