TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS

TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS

The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, tit...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BERGSTROM, Daniel, B, CHUN, Jin-Sung, PRADHAN, Sameer S, CHIU, Julia
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium - containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.