TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS
The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, tit...
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creator | BERGSTROM, Daniel, B CHUN, Jin-Sung PRADHAN, Sameer S CHIU, Julia |
description | The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium - containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate. |
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Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium - containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAMCfVzDw5x9VNwdwxxDVZw8w9S8PP30w3wcfRzDFIICXL0C_YMDvEPCuZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAcaWRsbGJuZOhsZEKAEABOkkTQ</recordid><startdate>20240403</startdate><enddate>20240403</enddate><creator>BERGSTROM, Daniel, B</creator><creator>CHUN, Jin-Sung</creator><creator>PRADHAN, Sameer S</creator><creator>CHIU, Julia</creator><scope>EVB</scope></search><sort><creationdate>20240403</creationdate><title>TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS</title><author>BERGSTROM, Daniel, B ; CHUN, Jin-Sung ; PRADHAN, Sameer S ; CHIU, Julia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3923347B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BERGSTROM, Daniel, B</creatorcontrib><creatorcontrib>CHUN, Jin-Sung</creatorcontrib><creatorcontrib>PRADHAN, Sameer S</creatorcontrib><creatorcontrib>CHIU, Julia</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BERGSTROM, Daniel, B</au><au>CHUN, Jin-Sung</au><au>PRADHAN, Sameer S</au><au>CHIU, Julia</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS</title><date>2024-04-03</date><risdate>2024</risdate><abstract>The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium - containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS |
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