TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS
The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, tit...
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| creator | BERGSTROM, Daniel, B CHUN, Jin-Sung PRADHAN, Sameer S CHIU, Julia |
| description | The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium - containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate. |
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Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium - containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.</abstract><oa>free_for_read</oa></addata></record> |
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| title | TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS |
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