TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS

The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, tit...

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Hauptverfasser: BERGSTROM, Daniel, B, CHUN, Jin-Sung, PRADHAN, Sameer S, CHIU, Julia
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creator BERGSTROM, Daniel, B
CHUN, Jin-Sung
PRADHAN, Sameer S
CHIU, Julia
description The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium - containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3923347B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3923347B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3923347B13</originalsourceid><addsrcrecordid>eNrjZNAMCfVzDw5x9VNwdwxxDVZw8w9S8PP30w3wcfRzDFIICXL0C_YMDvEPCuZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAcaWRsbGJuZOhsZEKAEABOkkTQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS</title><source>esp@cenet</source><creator>BERGSTROM, Daniel, B ; CHUN, Jin-Sung ; PRADHAN, Sameer S ; CHIU, Julia</creator><creatorcontrib>BERGSTROM, Daniel, B ; CHUN, Jin-Sung ; PRADHAN, Sameer S ; CHIU, Julia</creatorcontrib><description>The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium - containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240403&amp;DB=EPODOC&amp;CC=EP&amp;NR=3923347B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240403&amp;DB=EPODOC&amp;CC=EP&amp;NR=3923347B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BERGSTROM, Daniel, B</creatorcontrib><creatorcontrib>CHUN, Jin-Sung</creatorcontrib><creatorcontrib>PRADHAN, Sameer S</creatorcontrib><creatorcontrib>CHIU, Julia</creatorcontrib><title>TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS</title><description>The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium - containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAMCfVzDw5x9VNwdwxxDVZw8w9S8PP30w3wcfRzDFIICXL0C_YMDvEPCuZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAcaWRsbGJuZOhsZEKAEABOkkTQ</recordid><startdate>20240403</startdate><enddate>20240403</enddate><creator>BERGSTROM, Daniel, B</creator><creator>CHUN, Jin-Sung</creator><creator>PRADHAN, Sameer S</creator><creator>CHIU, Julia</creator><scope>EVB</scope></search><sort><creationdate>20240403</creationdate><title>TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS</title><author>BERGSTROM, Daniel, B ; CHUN, Jin-Sung ; PRADHAN, Sameer S ; CHIU, Julia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3923347B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BERGSTROM, Daniel, B</creatorcontrib><creatorcontrib>CHUN, Jin-Sung</creatorcontrib><creatorcontrib>PRADHAN, Sameer S</creatorcontrib><creatorcontrib>CHIU, Julia</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BERGSTROM, Daniel, B</au><au>CHUN, Jin-Sung</au><au>PRADHAN, Sameer S</au><au>CHIU, Julia</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS</title><date>2024-04-03</date><risdate>2024</risdate><abstract>The present description relates to the field of fabricating microelectronicdevices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium - containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-06T00%3A21%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BERGSTROM,%20Daniel,%20B&rft.date=2024-04-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3923347B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true