AG ALLOY SPUTTERING TARGET, AND AG ALLOY FILM

An Ag alloy sputtering target includes Mg in a range of more than 1.0 atom% and 5.0 atom% or less, Pd in a range of more than 0.10 atom% and 2.00 atom% or less, and a balance consisting of Ag and inevitable impurities. The Ag alloy sputtering target may further include 0.10 atom% or more of Au, and...

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Bibliographische Detailangaben
Hauptverfasser:	NONAKA, Sohei, TOSHIMORI, Yuto
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ALLOYS CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	An Ag alloy sputtering target includes Mg in a range of more than 1.0 atom% and 5.0 atom% or less, Pd in a range of more than 0.10 atom% and 2.00 atom% or less, and a balance consisting of Ag and inevitable impurities. The Ag alloy sputtering target may further include 0.10 atom% or more of Au, and a total content of Au and Pd may be set to 5.00 atom% or less. The Ag alloy sputtering target may further include Ca in a range of 0.01 atom% or more and 0.15 atom% or less. In addition, the oxygen content may be 0.010 % by mass or less.