SEMICONDUCTOR DEVICE WITH PASSIVE MAGNETO-ELECTRIC TRANSDUCER
The present invention relates to a semiconductor device comprising :- a first diffusion region (110) of a first type with embedded therein a second and a third diffusion region (115) of a second type different from said first type, said second and said third diffusion region more doped than said fir...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | The present invention relates to a semiconductor device comprising :- a first diffusion region (110) of a first type with embedded therein a second and a third diffusion region (115) of a second type different from said first type, said second and said third diffusion region more doped than said first region, said second and third diffusion region each connected to a respective contact (130, 135),- a dielectric layer (120) covering at least an edge of said second and third diffusion region and the region in between said second and third diffusion region,- a piezoelectric layer (140a) disposed on, over, adjacent to or in contact with said dielectric layer (120),- a structure (150a) arranged to perform mechanical stress on said piezoelectric layer in response to a magnetic field. |
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