WAFER CARRIER FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION

This application provides a wafer carrier for metal organic chemical vapor deposition. The wafer carrier includes at least one wafer sub-carrier that is in a groove structure and that is configured to place an epitaxial wafer substrate. A first space in the wafer sub-carrier is filled with a first thermally conductive material. The first space is a space between a flat edge of the epitaxial wafer substrate and a side wall of the wafer sub-carrier when the epitaxial wafer substrate is placed on the wafer sub-carrier. A thermal conductivity of the first thermally conductive material is not lower than a thermal conductivity of the wafer sub-carrier. According to the wafer carrier provided in embodiments of this application, a thermal radiation heating effect at a position of the flat edge or the border of the epitaxial wafer substrate can be improved, and a temperature at the position of the flat edge of the epitaxial wafer substrate can be compensated for, so that a temperature of the entire epitaxial wafer substrate can be more even. In this way, generation of defects such as black spots, blurred edges, and cracks on a flat edge of an epitaxial wafer is avoided, and crystal quality of the flat edge of the epitaxial wafer is improved, thereby improving an overall yield of the epitaxial wafer.