MXENE-MODIFIED HYBRID PHOTOCONVERTER

The disclosed photoconverter is related to the technology of thin-film hybrid semiconductor photoconverters. Thin-film hybrid photoconverters with heterojunctions and layers is modified with Ti3C2Tx MXenes for use in visible sunlight spectrum and UV-IR regions (380 to 780 nm). The device with absorb...

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Hauptverfasser: MURATOV, Dmitry Sergeevich, SARANIN, Danila Sergeevich, KUZNETSOV, Denis Valerievich, DIDENKO, Sergei Ivanovich, PAZNIAK, Anna Ivanovna, GOSTISHCHEV, Pavel Andreevich, DI CARLO, Al'do
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:The disclosed photoconverter is related to the technology of thin-film hybrid semiconductor photoconverters. Thin-film hybrid photoconverters with heterojunctions and layers is modified with Ti3C2Tx MXenes for use in visible sunlight spectrum and UV-IR regions (380 to 780 nm). The device with absorber layer of metal-organic APbX3 perovskites was fabricated in n-i-p and p-i-n configurations, including structures with carbon electrodes, and stabilized characteristics were stabilized by introduction of thin Ti3C2Tx MXene layers (5-50 nm) at the junction and contact interfaces, i.e., APbX3 perovskite absorber layer/MXene, electron transport layer/MXene, cathode electrode/MXene, as well as by doping of carbon electrode for reduction of the work function by incorporating of MXenes into the bulk of material with appropriate weight percentage for providing ohmic contact with higher efficiency of charge collection.