ORGANIC PHOTODIODE AND INFRARED CMOS SENSOR

There are provided an organic photodiode having high photoelectric conversion efficiency and a low dark current value and an infrared CMOS sensor including the organic photodiode. The organic photodiode includes, in sequence, a first electrode, a hole transport layer, a photoelectric conversion laye...

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Bibliographische Detailangaben
1. Verfasser:	OKABE, Kazuki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	There are provided an organic photodiode having high photoelectric conversion efficiency and a low dark current value and an infrared CMOS sensor including the organic photodiode. The organic photodiode includes, in sequence, a first electrode, a hole transport layer, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer contains a p-type semiconductor and an n-type semiconductor. The hole transport layer contains a polymer compound containing a repeat unit represented by formula (2) illustrated below. The polymer compound contains groups that form mutual bonds between carbon atoms of side chains of molecules of the polymer compound at 230°C.