PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE
Provided is a method for producing a semiconductor substrate which is capable of easily reducing residue of an ion injection mask formed using a composition containing an organopolysiloxane. This method comprises: a mask formation step of forming a mask on a semiconductor substrate to be processed,...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | Provided is a method for producing a semiconductor substrate which is capable of easily reducing residue of an ion injection mask formed using a composition containing an organopolysiloxane. This method comprises: a mask formation step of forming a mask on a semiconductor substrate to be processed, using an energy-sensitive composition comprising an organopolysiloxane, an ion implantation step of implanting ions into the semiconductor substrate to be processed, the semiconductor substrate being provided with the mask, and a mask removal step of removing the mask, wherein the mask removal step comprises: a first step comprising at least one of: contacting the mask with a first treatment liquid containing an oxidizing agent and irradiating the mask with plasma generated using an oxygen-containing gas, and a second step comprising bringing the mask after being subjected to the first step into contact with a second treatment liquid comprising fluoride ions. |
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