METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE ARRANGEMENT

A method for forming semiconductor substrate arrangement comprises forming a mask on a semiconductor substrate, the semiconductor substrate comprising a dielectric insulation layer, and a first metallization layer arranged on the dielectric insulation layer, and the mask comprising at least one opening, wherein the first metallization layer is arranged between the mask and the dielectric insulation layer. The method further comprises forming a layer of electrically conductive coating on the first metallization layer, wherein the layer of electrically conductive coating is formed in the at least one opening on those regions of the first metallization layer that are not covered by the mask, and, after forming the layer of electrically conductive coating, removing the mask from the semiconductor substrate. Forming the mask comprises either applying an even layer of material on the first metallization layer such that a thickness of the mask in a vertical direction in a region adjacent to the edges of the mask equals a thickness in the vertical direction of regions of the mask further away from the edges, or applying the material of the mask on the first metallization layer such that the thickness of the mask in the region adjacent to the edges of the mask is greater than the thickness of the regions of the mask further away from the edges, wherein the vertical direction is perpendicular to a top surface of the semiconductor substrate.