CMOS CAP FOR MEMS DEVICES

A complementary metal oxide semiconductor (CMOS) device 115 embedded with micro-electromechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device 115 is encapsulated with a CMOS compatible IR transparent cap 280 to hermetically...

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Bibliographische Detailangaben
Hauptverfasser:	ANG, Wan Chia, KROPELNICKI, Piotr, OCAK, Ilker Ender, PONTIN, Paul Simon
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	COLORIMETRY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS RADIATION PYROMETRY TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	A complementary metal oxide semiconductor (CMOS) device 115 embedded with micro-electromechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device 115 is encapsulated with a CMOS compatible IR transparent cap 280 to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap 280 includes a base cap 281 with cap release openings 284 and a seal cap 284 which seals the cap release openings 285.