SEMICONDUCTOR DEVICE

A semiconductor device (1) includes: a first electrode (E1) provided on a semiconductor multilayer structure (11); a second electrode (E2) provided on a substrate (21); and a bonding metal layer (30) which bonds the first electrode (E1) and the second electrode (E2) together. The bonding metal layer...

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Bibliographische Detailangaben
Hauptverfasser:	OYA, Mitsuaki, MASAMOTO, Keimei, HAYASHI, Shigeo, HIROKI, Masanori
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor device (1) includes: a first electrode (E1) provided on a semiconductor multilayer structure (11); a second electrode (E2) provided on a substrate (21); and a bonding metal layer (30) which bonds the first electrode (E1) and the second electrode (E2) together. The bonding metal layer (30) includes a gap (33) inside.