POWER MODULE HOUSING WITH IMPROVED PROTRUSION DESIGN
Aspects of the present disclosure include one or more power semiconductor device modules. A power semiconductor module can include: a power terminal, a housing, a heatsink and a protrusion, wherein the housing includes a first tab, and a first protrusion, and wherein the first tab contacts the subst...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Aspects of the present disclosure include one or more power semiconductor device modules. A power semiconductor module can include: a power terminal, a housing, a heatsink and a protrusion, wherein the housing includes a first tab, and a first protrusion, and wherein the first tab contacts the substrate, and the first protrusion contacts the heatsink. |
---|