FILM STRUCTURE, ELEMENT, AND MULTILEVEL ELEMENT

FILM STRUCTURE, ELEMENT, AND MULTILEVEL ELEMENT

The film structure according to an embodiment of the present invention includes at least one active monolayer having an energy level quantized in at least one axial direction and at least one barrier alternately stacked with the at least one active monolayer. Current flows through the active monolay...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM, Hongbum, JUNG, Jinwon, SUNG, Myungmo, PARK, Jinseon
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The film structure according to an embodiment of the present invention includes at least one active monolayer having an energy level quantized in at least one axial direction and at least one barrier alternately stacked with the at least one active monolayer. Current flows through the active monolayer, and the current flow may be limited by the quantized energy level.