WAFER DICING FROM WAFER BACKSIDE AND FRONT SIDE

A method of dicing a monocrystalline silicon substrate including a plurality of integrated circuits on a front side thereof and metallization on a backside thereof is described. The method includes: patterning the metallization on the backside of the monocrystalline silicon substrate with a first femtosecond-based laser scribing process to provide a first plurality of laser scribe lines on the backside, the patterning performed without using a mask; forming a water soluble mask on the front side of the monocrystalline silicon substrate; patterning, from the front side, the water soluble mask with a second femtosecond-based laser scribing process to provide a patterned water soluble mask and to provide a second plurality of scribe lines exposing regions of the monocrystalline silicon substrate between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines; plasma etching the monocrystalline silicon substrate through the second plurality of scribe lines to singulate the integrated circuits; and removing the patterned water soluble mask with an aqueous solution.