PRODUCTION METHOD FOR FIELD-EFFECT TRANSISTOR AND PRODUCTION METHOD FOR WIRELESS COMMUNICATION DEVICE

PRODUCTION METHOD FOR FIELD-EFFECT TRANSISTOR AND PRODUCTION METHOD FOR WIRELESS COMMUNICATION DEVICE

An object of the present invention is to provide an FET the characteristic variation of which is inhibited, and to produce such an FET using an easy and convenient producing method. The spirit of the present invention is that a physical quantity is measured on the basis of that/those one or more of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MURASE, Seiichiro, HORII, Shinji, SHIMIZU, Hiroji
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator MURASE, Seiichiro
HORII, Shinji
SHIMIZU, Hiroji
description An object of the present invention is to provide an FET the characteristic variation of which is inhibited, and to produce such an FET using an easy and convenient producing method. The spirit of the present invention is that a physical quantity is measured on the basis of that/those one or more of a gate electrode, a gate insulating layer, a source electrode, and a drain electrode which is/are provided on a substrate, and that a semiconductor layer is formed, wherein to form the semiconductor layer, a semiconductor material is applied in the coating quantity determined on the basis of the physical quantity.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3869539A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3869539A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3869539A43</originalsourceid><addsrcrecordid>eNqNi7EKwjAQQLM4iPoP9wOdomLHcLnQgyYpydWOpUicRAv1_1HE0cHpweO9tSpdirZH4RjAkzTRgosJHFNrK3KOUECSCZmzvL0JFn4fAydqKWfA6H0fGM2nsHRmpK1aXafbUnZfbhQ4EmyqMj_GsszTpdzLc6ROn471Qddmr_9IXlNlNOw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PRODUCTION METHOD FOR FIELD-EFFECT TRANSISTOR AND PRODUCTION METHOD FOR WIRELESS COMMUNICATION DEVICE</title><source>esp@cenet</source><creator>MURASE, Seiichiro ; HORII, Shinji ; SHIMIZU, Hiroji</creator><creatorcontrib>MURASE, Seiichiro ; HORII, Shinji ; SHIMIZU, Hiroji</creatorcontrib><description>An object of the present invention is to provide an FET the characteristic variation of which is inhibited, and to produce such an FET using an easy and convenient producing method. The spirit of the present invention is that a physical quantity is measured on the basis of that/those one or more of a gate electrode, a gate insulating layer, a source electrode, and a drain electrode which is/are provided on a substrate, and that a semiconductor layer is formed, wherein to form the semiconductor layer, a semiconductor material is applied in the coating quantity determined on the basis of the physical quantity.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS THEREOF ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220720&amp;DB=EPODOC&amp;CC=EP&amp;NR=3869539A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220720&amp;DB=EPODOC&amp;CC=EP&amp;NR=3869539A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MURASE, Seiichiro</creatorcontrib><creatorcontrib>HORII, Shinji</creatorcontrib><creatorcontrib>SHIMIZU, Hiroji</creatorcontrib><title>PRODUCTION METHOD FOR FIELD-EFFECT TRANSISTOR AND PRODUCTION METHOD FOR WIRELESS COMMUNICATION DEVICE</title><description>An object of the present invention is to provide an FET the characteristic variation of which is inhibited, and to produce such an FET using an easy and convenient producing method. The spirit of the present invention is that a physical quantity is measured on the basis of that/those one or more of a gate electrode, a gate insulating layer, a source electrode, and a drain electrode which is/are provided on a substrate, and that a semiconductor layer is formed, wherein to form the semiconductor layer, a semiconductor material is applied in the coating quantity determined on the basis of the physical quantity.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKwjAQQLM4iPoP9wOdomLHcLnQgyYpydWOpUicRAv1_1HE0cHpweO9tSpdirZH4RjAkzTRgosJHFNrK3KOUECSCZmzvL0JFn4fAydqKWfA6H0fGM2nsHRmpK1aXafbUnZfbhQ4EmyqMj_GsszTpdzLc6ROn471Qddmr_9IXlNlNOw</recordid><startdate>20220720</startdate><enddate>20220720</enddate><creator>MURASE, Seiichiro</creator><creator>HORII, Shinji</creator><creator>SHIMIZU, Hiroji</creator><scope>EVB</scope></search><sort><creationdate>20220720</creationdate><title>PRODUCTION METHOD FOR FIELD-EFFECT TRANSISTOR AND PRODUCTION METHOD FOR WIRELESS COMMUNICATION DEVICE</title><author>MURASE, Seiichiro ; HORII, Shinji ; SHIMIZU, Hiroji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3869539A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MURASE, Seiichiro</creatorcontrib><creatorcontrib>HORII, Shinji</creatorcontrib><creatorcontrib>SHIMIZU, Hiroji</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MURASE, Seiichiro</au><au>HORII, Shinji</au><au>SHIMIZU, Hiroji</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION METHOD FOR FIELD-EFFECT TRANSISTOR AND PRODUCTION METHOD FOR WIRELESS COMMUNICATION DEVICE</title><date>2022-07-20</date><risdate>2022</risdate><abstract>An object of the present invention is to provide an FET the characteristic variation of which is inhibited, and to produce such an FET using an easy and convenient producing method. The spirit of the present invention is that a physical quantity is measured on the basis of that/those one or more of a gate electrode, a gate insulating layer, a source electrode, and a drain electrode which is/are provided on a substrate, and that a semiconductor layer is formed, wherein to form the semiconductor layer, a semiconductor material is applied in the coating quantity determined on the basis of the physical quantity.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP3869539A4
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
SEMICONDUCTOR DEVICES
title PRODUCTION METHOD FOR FIELD-EFFECT TRANSISTOR AND PRODUCTION METHOD FOR WIRELESS COMMUNICATION DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T21%3A49%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MURASE,%20Seiichiro&rft.date=2022-07-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3869539A4%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true