PRODUCTION METHOD FOR FIELD-EFFECT TRANSISTOR AND PRODUCTION METHOD FOR WIRELESS COMMUNICATION DEVICE

An object of the present invention is to provide an FET the characteristic variation of which is inhibited, and to produce such an FET using an easy and convenient producing method. The spirit of the present invention is that a physical quantity is measured on the basis of that/those one or more of...

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Bibliographische Detailangaben
Hauptverfasser:	MURASE, Seiichiro, HORII, Shinji, SHIMIZU, Hiroji
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An object of the present invention is to provide an FET the characteristic variation of which is inhibited, and to produce such an FET using an easy and convenient producing method. The spirit of the present invention is that a physical quantity is measured on the basis of that/those one or more of a gate electrode, a gate insulating layer, a source electrode, and a drain electrode which is/are provided on a substrate, and that a semiconductor layer is formed, wherein to form the semiconductor layer, a semiconductor material is applied in the coating quantity determined on the basis of the physical quantity.