SEMICONDUCTOR MATERIAL, INFRARED LIGHT RECEIVING ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR MATERIAL

Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula: Composition formula: Mg2Sn·Znain which, a is a Zn content of from 0.05 to 1 at% relative to Mg2Sn.

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	UDONO, Haruhiko, ASAHI, Toshiaki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula: Composition formula: Mg2Sn·Znain which, a is a Zn content of from 0.05 to 1 at% relative to Mg2Sn.