BONDED SEMICONDUCTOR STRUCTURES HAVING BONDING CONTACTS MADE OF INDIFFUSIBLE CONDUCTIVE MATERIALS AND METHODS FOR FORMING THE SAME

BONDED SEMICONDUCTOR STRUCTURES HAVING BONDING CONTACTS MADE OF INDIFFUSIBLE CONDUCTIVE MATERIALS AND METHODS FOR FORMING THE SAME

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first device layer is formed above a first substrate. A first bonding layer including a first bonding contact is formed above the f...

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Bibliographische Detailangaben
Hauptverfasser: HUA, Zi Qun, ZHU, Jifeng, HUO, Zongliang, XIAO, Li Hong, LIU, Jun, CHEN, Jun
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first device layer is formed above a first substrate. A first bonding layer including a first bonding contact is formed above the first device layer. The first bonding contact is made of a first indiffusible conductive material. A second device layer is formed above a second substrate. A second bonding layer including a second bonding contact is formed above the second device layer. The first substrate and the second substrate are bonded in a face-to-face manner, such that the first bonding contact is in contact with the second bonding contact at a bonding interface.