REFLECTIVE EUV MASK ABSORBER MANIPULATION TO IMPROVE WAFER CONTRAST

Techniques and systems for improving wafer contrast by manipulating reflective extreme ultraviolet (EUV) mask absorber are described. Some embodiment disclosed herein provide for EUV absorber material, which transmits some EUV illumination, to suppress the printing of sub-resolution assist features...

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Bibliographische Detailangaben
Hauptverfasser:	KANDEL, Yudhishthir P, MELVIN III, Lawrence S
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	Techniques and systems for improving wafer contrast by manipulating reflective extreme ultraviolet (EUV) mask absorber are described. Some embodiment disclosed herein provide for EUV absorber material, which transmits some EUV illumination, to suppress the printing of sub-resolution assist features (SRAFs) while making the SRAFs closer in size to the printed feature by thinning the SRAF absorber thickness from the nominal mask absorber thickness in the bright-field mask case. In the dark-field mask case, a layer of absorber material is left in the SRAF trenches to prevent SRAF printing.