THREE-DIMENSIONAL MEMORY DEVICE HAVING SEMICONDUCTOR PLUG FORMED USING BACKSIDE SUBSTRATE THINNING

THREE-DIMENSIONAL MEMORY DEVICE HAVING SEMICONDUCTOR PLUG FORMED USING BACKSIDE SUBSTRATE THINNING

Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack including interleaved conductive layers and dielectric layers, a channel structure extending vertically through the memory stack, and a semiconductor layer above...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIU, Shasha, LU, Feng, XU, Qianbing, XIAO, Lihong, WANG, Enbo
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack including interleaved conductive layers and dielectric layers, a channel structure extending vertically through the memory stack, and a semiconductor layer above the memory stack. The channel structure includes a channel plug in a lower portion of the channel structure, a memory film along a sidewall of the channel structure, and a semiconductor channel over the memory film and in contact with the channel plug. The semiconductor layer includes a semiconductor plug above and in contact with the semiconductor channel.