PHOTORESIST COMPOSITION FOR LINE DOUBLING

Photoresist compositions, methods of manufacturing the photoresist compositions, and methods of using the photoresist compositions are provided. In one implementation, the photoresist composition comprises a novolac (novolac) resin, a diazonaphthoquinone (DNQ) dissolution inhibitor, a bis(azide) cro...

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Bibliographische Detailangaben
Hauptverfasser:	BENCHER, Christopher Dennis, VORA, Ankit
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	Photoresist compositions, methods of manufacturing the photoresist compositions, and methods of using the photoresist compositions are provided. In one implementation, the photoresist composition comprises a novolac (novolac) resin, a diazonaphthoquinone (DNQ) dissolution inhibitor, a bis(azide) crosslinker, and a casting solvent. In one implementation, the bis(azide) crosslinker absorbs at wavelengths in a range between 325 nanometers and 400 nanometers. In one implementation, the bis(azide) crosslinker is an aromatic bi(azide) crosslinker.