IMAGE SENSOR

An image sensor (1000A) includes pixel regions (PR) separated by an isolation region and receiving incident light, color filters (235) respectively disposed on a surface of the semiconductor substrate (105) corresponding to the pixel regions (PR), a cover insulating layer (240) disposed on the surfa...

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Bibliographische Detailangaben
Hauptverfasser:	PARK, Sangsu, LEE, Beomsuk, LEE, Taeyon, PARK, Sangchun, KIM, Kwansik
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	An image sensor (1000A) includes pixel regions (PR) separated by an isolation region and receiving incident light, color filters (235) respectively disposed on a surface of the semiconductor substrate (105) corresponding to the pixel regions (PR), a cover insulating layer (240) disposed on the surface of the semiconductor substrate (105) and covering the color filters (235), first transparent electrodes (270) disposed on the cover insulating layer (240) and spaced apart to respectively overlap the color filters (235), an isolation pattern (250) disposed on the cover insulating layer (240) between the first transparent electrodes (270) and having a trench (TN) spaced apart from the first transparent electrodes (270), a drain electrode (270D) disposed in the trench (TN) of the isolation pattern (250), and an organic photoelectric layer (280) and a second transparent electrode (285) sequentially disposed on the first transparent electrodes (270) and the isolation pattern (250).