A BIPOLAR JUNCTION TRANSISTOR, AND A METHOD OF FORMING AN EMITTER FOR A BIPOLAR JUNCTION TRANSISTOR

A bipolar junction transistor is provided with an emitter structure (704) that is positioned above the upper surface of the base (701a) region. The thickness of the emitter (704) and the interfacial oxide (702) between the emitter and the base is configured to optimize a gain for a given type of tra...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	O'SULLIVAN, Catriona Marie, TOOHER, Shane, O HANNAIDH, Breandan Pol Og, BRANNICK, Alan, COYNE, Edward, GEARY, Shane Patrick
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!