A BIPOLAR JUNCTION TRANSISTOR, AND A METHOD OF FORMING AN EMITTER FOR A BIPOLAR JUNCTION TRANSISTOR

A BIPOLAR JUNCTION TRANSISTOR, AND A METHOD OF FORMING AN EMITTER FOR A BIPOLAR JUNCTION TRANSISTOR

A bipolar junction transistor is provided with an emitter structure (704) that is positioned above the upper surface of the base (701a) region. The thickness of the emitter (704) and the interfacial oxide (702) between the emitter and the base is configured to optimize a gain for a given type of tra...

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Hauptverfasser: O'SULLIVAN, Catriona Marie, TOOHER, Shane, O HANNAIDH, Breandan Pol Og, BRANNICK, Alan, COYNE, Edward, GEARY, Shane Patrick
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A bipolar junction transistor is provided with an emitter structure (704) that is positioned above the upper surface of the base (701a) region. The thickness of the emitter (704) and the interfacial oxide (702) between the emitter and the base is configured to optimize a gain for a given type of transistor. Moreover, a method of fabricating PNP and NPN transistors on the same substrate using a complementary bipolar fabrication process is provided. The method enables the emitter structure for the NPN transistor to be defined separately to that of the PNP transistor. This is achieved by epitaxially growing the emitter layer for the PNP transistor and growing the emitter layer for the NPN transistor in a thermal furnace.