OPTOELETRONIC DEVICES FORMED OVER A BUFFER

An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed...

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Bibliographische Detailangaben
Hauptverfasser:	MORGAN, Aled, Owen, FASTENAU, Joel, Mark, FETTERS, Matthew, NELSON, Scott, Alan, FREY, Philip, Lee, LIU, Amy Wing, Kwan, ZENG, Zhaoquan, KATTNER, Michael, Vincent, LUBYSHEV, Dmitri, EDWARDS, Stuart, Andrew, KRYSIAK, Hubert
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.