BORON NITRIDE NANOTUBE SYNTHESIS VIA LASER DIODE

High quality Boron Nitride Nanotubes (BNNTs) may be synthesized by heating a boron melt target via one or more laser diodes, including laser diode stacks. The use of a diode stack and beam shaping optics to irradiate the boron melt eliminates the need for a conventional laser cavity as has been empl...

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Bibliographische Detailangaben
Hauptverfasser:	HENNEBERG, Thomas, W, STEVENS, Jonathan, C, JORDAN, Kevin, C, SMITH, Michael, W, WHITNEY, R., Roy
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS THEREOF CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY LIME, MAGNESIA METALLURGY NON-METALLIC ELEMENTS REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE
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Zusammenfassung:	High quality Boron Nitride Nanotubes (BNNTs) may be synthesized by heating a boron melt target via one or more laser diodes, including laser diode stacks. The use of a diode stack and beam shaping optics to irradiate the boron melt eliminates the need for a conventional laser cavity as has been employed with previous embodiments. The diode arrangements facilitate managing power distribution on the born melt(s), nitrogen gas flows, and blackbody radiation that drive the BNNT self-assembly process. These parameters may be used for controlling the proportions and characteristics of boron species, a-BN particles, h-BN nanocages, and h-BN nano sheets in the as-synthesized BNNT material while enhancing the quality of the BNNTs.