THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR, AND DISPLAY APPARATUS INCLUDING THE THIN FILM TRANSISTOR

An embodiment of the present disclosure provides a thin film transistor (100), a method of manufacturing the thin film transistor and a display apparatus including the thin film transistor. The thin film transistor includes an active layer (130) on a substrate (110), a gate electrode (140) disposed...

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Bibliographische Detailangaben
Hauptverfasser: Jo, KwangMin, Yang, JeongSuk, Lee, Sohyung
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:An embodiment of the present disclosure provides a thin film transistor (100), a method of manufacturing the thin film transistor and a display apparatus including the thin film transistor. The thin film transistor includes an active layer (130) on a substrate (110), a gate electrode (140) disposed apart from the active layer to at least partially overlap the active layer, and a gate insulation layer (150) between the active layer and the gate electrode. The gate insulation layer may cover a whole top surface of the active layer facing the gate electrode. The active layer may include a channel part (131) overlapping the gate electrode, a conductivity-providing part (133a, 133b) which does not overlap the gate electrode, and an offset part (132a, 132b) between the channel part and the conductivity-providing part. The offset part may not overlap the gate electrode, and the conductivity-providing part may be doped with a dopant.