WAVELENGTH DRIFT SUPPRESSION FOR BURST-MODE TUNABLE EML LASER

A method (700) of biasing a tunable laser (310) during burst-on and burst-off states includes receiving a burst mode signal (514) indicative of the burst-on state or the burst-off state and when the burst mode signal is indicative of the burst-on state: delivering a first bias current (IGAIN) to an...

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Bibliographische Detailangaben
Hauptverfasser:	DU, Liang, YIN, Shuang, DESANTI, Claudio, ZHAO, Xiangjun, JIANG, Changhong, Joy, ZHANG, Tao, LAM, Cedric, Fung, NAGARAJAN, Muthu, BARRATT, Adam Edwin, Taylor
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY TRANSMISSION
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Zusammenfassung:	A method (700) of biasing a tunable laser (310) during burst-on and burst-off states includes receiving a burst mode signal (514) indicative of the burst-on state or the burst-off state and when the burst mode signal is indicative of the burst-on state: delivering a first bias current (IGAIN) to an anode of a gain-section diode (590a) disposed on a shared substrate of the tunable laser; and delivering a second bias current (IPH) to an anode of phase-section diode (590b) disposed on the shared substrate. The second bias current is less than the first bias current. When the burst mode signal transitions to be indicative of the burst-off state, the method also includes delivering the first bias current to the anode of the gain-section diode; and delivering the second bias current to the anode of the phase-section diode wherein the first bias current is less than the second bias current.