LAMINATE STRUCTURE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE

[Problem]: The problem of the present invention is to provide a stacked structure excellent in stability of atomic arrangement, a method of manufacturing same, and a semiconductor device using the stacked structure. [Solution]: The stacked structure of the present invention is characterized in that...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KAMATA Yoshiki, TOMINAGA Junji, KUNISHIMA Iwao, MIYATA Noriyuki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	[Problem]: The problem of the present invention is to provide a stacked structure excellent in stability of atomic arrangement, a method of manufacturing same, and a semiconductor device using the stacked structure. [Solution]: The stacked structure of the present invention is characterized in that it has an alloy layer A having germanium and tellurium as a main component and an alloy layer B having tellurium and either of antimony or bismuth as a main component, and at least either of the alloy layer A or the alloy layer B contains at least either of sulfur or selenium as a chalcogen atom.