COATING COMPRISING MCRAL-X COATING LAYER

Coated substrate comprising a substrate (1) comprising a metal substrate surface (11) coated with a coating system (7) consisting of or comprising a functional coating film (5), said functional coating film (5) consisting of or comprising at least one MCr Al-X coating layer, whereas ° the at least o...

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Bibliographische Detailangaben
Hauptverfasser:	JARRY, Oliver, RAMM, Juergen, HUNOLD, Oliver, WIDRIG, Beno
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Coated substrate comprising a substrate (1) comprising a metal substrate surface (11) coated with a coating system (7) consisting of or comprising a functional coating film (5), said functional coating film (5) consisting of or comprising at least one MCr Al-X coating layer, whereas ° the at least one MCr Al-X coating layer is deposited directly on the metal substrate (11), or ° the at least one MCr Al-X coating layer is deposited on an intermediate coating layer (3) that is formed of at least one substrate matching layer (31), wherein the at least one substrate matching layer (31) is deposited directly on the metal substrate surface (11), wherein the layer deposited directly on the metal substrate surface (11), it means respectively the MCr Al-X coating layer if it is deposited directly on the metal substrate surface (11) or the substrate matching layer (31) if it is deposited on the metal substrate surface (11) exhibits: ° epitaxial growth in part or totally, or ° heteroepitaxial growth in part or totally.