SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes: a substrate (1); a first conductivity-type drift region (4) disposed on a principal surface of the substrate (1); a second conductivity-type first well region (21) extending from a second principal surface of the drift region (4) in a direction perpendicular to the s...

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Bibliographische Detailangaben
Hauptverfasser:	TANAKA, Ryota, MARUI, Toshiharu, YAMAGAMI, Shigeharu, TAKEMOTO, Keisuke, HAYAMI, Yasuaki, NI, Wei, HAYASHI, Tetsuya, NUMAKURA, Keiichiro
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device includes: a substrate (1); a first conductivity-type drift region (4) disposed on a principal surface of the substrate (1); a second conductivity-type first well region (21) extending from a second principal surface of the drift region (4) in a direction perpendicular to the second principal surface and having a bottom portion reaching inside of the substrate (1); a second conductivity-type second well region (22) being in contact with the bottom portion and disposed at a portion inside the substrate (1) located below the bottom portion; and a first conductivity-type source region (3) extending in a perpendicular direction from a region of the second principal surface provided with the first well region (21), and reaching the second well region (22). In a direction parallel to the second principal surface and oriented from a source electrode (15) to a drain electrode (16), a distance of the second well region (22) in contact with a gate insulating film (6) is shorter than a distance of the first well region (21) in contact with the gate insulating film (6).