TARGET AND METHOD FOR PRODUCING A TARGET
The invention relates to a target for physical vapor deposition, comprising the following chemical composition: 95 mol% to 100 mol% of a mixture of at least two of the following compounds: titanium boride (TiB2) and/or vanadium boride (VB2) and/or mixed phases ((Ti,V)B2) of titanium boride (TiB2) an...
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Zusammenfassung: | The invention relates to a target for physical vapor deposition, comprising the following chemical composition: 95 mol% to 100 mol% of a mixture of at least two of the following compounds: titanium boride (TiB2) and/or vanadium boride (VB2) and/or mixed phases ((Ti,V)B2) of titanium boride (TiB2) and vanadium boride (VB2); 0.01 mol% to 5 mol% of carbon (C); less than 0.01 mol% of other borides than titanium boride (TiB2) and/or vanadium boride (VB2) and/or mixed phases ((Ti,V)B2) of titanium boride (TiB2) and vanadium boride (VB2), wherein, in relation to the metallic purity, the sum of the mixture of titanium boride (TiB2) and/or vanadium boride (VB2) and/or mixed phases ((Ti,V)B2) of titanium boride (TiB2) and vanadium boride (VB2) and the carbon (C) is at least 99.8 mol%, and comprising the following physical properties: a density greater than 90%, preferably greater than 95% of the theoretic density of the chemical composition defined above; and an average particle size of particles of the mixture of titanium boride (TiB2) and/or vanadium boride (VB2) and/or mixed phases ((Ti,V)B2) of titanium boride (TiB2) and vanadium boride (VB2) of less than 10 micrometres, preferably less than 3 micrometres. |
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