PHOTOELECTRIC CONVERSION ELEMENT

To improve an SN ratio of a photoelectric conversion element. A photoelectric conversion element (10) includes an anode (12), a cathode (16), an active layer (14) provided between the anode and the cathode, and a hole transport layer (13) provided between the anode and the active layer. The active l...

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Bibliographische Detailangaben
Hauptverfasser: ARAKI, Takafumi, FURUKAWA, Daisuke
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:To improve an SN ratio of a photoelectric conversion element. A photoelectric conversion element (10) includes an anode (12), a cathode (16), an active layer (14) provided between the anode and the cathode, and a hole transport layer (13) provided between the anode and the active layer. The active layer includes a p-type semiconductor material, which is a polymer compound having an absorption peak wavelength of 900 nm or higher, and an n-type semiconductor material, and an energy gap between an LUMO of the n-type semiconductor material contained in the active layer and a HOMO of a hole transport material contained in the hole transport layer is less than 0.9 eV.