PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

In the present invention an interdigitated back contact (IBC) photovoltaic device is disclosed and comprises a first patterned silicon layer (2) situated on an intrinsic layer (5), and having the same type of doping as the one of said substrate (3). First charge collection portions (2') are deposited on predetermined areas of the intrinsic layer (5), and comprise each an amorphous layer portion (2a) situated between said predetermined areas and said at least partially nano-crystalline layer portions (2b). The amorphous layer portions (2a) have a larger width than the width of the nano-crystalline layer portions (2b).On top if the first patterned silicon layer (2), a second nano-crystalline silicon layer (4) is deposited that has a doping of a second type being the other of the p-type doping or the n-type doping with respect to the doping-type of said first patterned silicon layer (2).