METHOD FOR FORMING A MULTI-LEVEL INTERCONNECT STRUCTURE IN A SEMICONDUCTOR DEVICE

According to an aspect of the present inventive concept there is provided a method for forming a multi-level interconnect structure in a semiconductor device comprising: a first interconnection level (110) including a first dielectric layer (112) and a first conductive structure (114); a second interconnection level (120) arranged above the first interconnection level (110) and including a second dielectric layer (122) and a second conductive structure (124); a third interconnection level (130) arranged above the second interconnection level (120) and including a third dielectric layer (132) and a third conductive structure (134); wherein the method comprises: forming a trench in the third dielectric layer; providing a first sacrificial material in the trench; and thereafter forming a via extending through the third interconnection level to the second conductive structure; providing a second sacrificial material in the via; forming a multi-level via extending through the third interconnection level to the first conductive structure; removing the first sacrificial material; removing the second sacrificial material; depositing a conductive material at least partially filling: the trench, thereby forming the third conductive structure (134); the via, thereby forming a via structure (102) forming an electrical connection between the third conductive structure (134) and the second conductive structure (124); and the multi-level via, thereby forming a multi-level via structure (104) forming an electrical connection between the third conductive structure (134) and the first conductive structure (114).