CONTROL OF A METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

The invention relates to a method and an actuating arrangement for controlling a MOSFET, in particular wide-bandgap MOSFET. A change of an actuating variable, which actuates the MOSFET as a function of an operating characteristic variable that influences the switching behavior of the MOSFET is stored in a characteristic block. The change counteracts a reference actuating value of the actuating variable. An actual value of the operating characteristic variable is determined during operation of the MOSFET, The actuating variable is changed from the reference actuating value as a function of the actual value commensurate with the change of the actuating variable stored in the characteristic block. The change stored in the characteristic block can include a change in the switch-on or switch-off voltage or gate resistance of the MOSFET as a function of the operating temperature or the operating voltage of the MOSFET.