PRODUCTION METHOD OF SILICON CARBIDE SINGLE CRYSTAL

The present invention provides a method for manufacturing a silicon carbide single crystal by sublimating a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The seed crystal substrate used is a substrate having a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container, and a convex-shaped end face of a grown ingot as a crystal growth surface. A diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container. Thereby, provided is a method for manufacturing a silicon carbide single crystal while enabling high straight-body percentage and little formation of different polytypes even in growth with no off-angle control, i.e., the growth is directed onto a basal plane which is not inclined from a C-axis .