HIGH PRESSURE ANNEALING PROCESS FOR METAL CONTAINING MATERIALS

The present disclosure provides methods for performing an annealing process on a metal containing layer in TFT display applications, semiconductor or memory applications. In one example, a method of forming a metal containing layer on a substrate includes supplying an oxygen containing gas mixture o...

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Bibliographische Detailangaben
Hauptverfasser: SHEK, Meiyee, SINGH, Kaushal K, YIEH, Ellie Y, NEMANI, Srinivas D
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:The present disclosure provides methods for performing an annealing process on a metal containing layer in TFT display applications, semiconductor or memory applications. In one example, a method of forming a metal containing layer on a substrate includes supplying an oxygen containing gas mixture on a substrate in a processing chamber, the substrate comprising a metal containing layer disposed on an optically transparent substrate, maintaining the oxygen containing gas mixture in the processing chamber at a process pressure between about 2 bar and about 50 bar, and thermally annealing the metal containing layer in the presence of the oxygen containing gas mixture.