SEMICONDUCTOR DEVICE AND TERMINAL DEVICE

This application discloses a semiconductor device and a manufacturing method. The device uses a groove-gate structure and a double-longitudinal RESURF technology using a longitudinal field plate and a longitudinal P-N structure, and a channel is disposed on a bottom of a groove, so that a drift region size of a cell is reduced, a drift region concentration is increased, a drift region resistance is reduced, and a cell size is reduced. The device may be implemented based on a conventional spit trench gate MOS process or a monolithic integrated BCD process technology. A manufacturing process is simple, and manufacturing costs are low. In this way, in this application, a conventional low-cost manufacturing technology is used to implement a bidirectional-voltage-withstand MOS-type switch device that has a low on resistance and high reliability. In addition, this application further discloses a terminal device.