MRAM STRUCTURE AND METHOD OF FABRICATING THE SAME

MRAM STRUCTURE AND METHOD OF FABRICATING THE SAME

A magnetoresistive random access memory (MRAM) structure includes a magnetic tunnel junction (MTJ), and a top electrode which contacts an end of the MTJ. The top electrode includes a top electrode upper portion and a top electrode lower portion. The width of the top electrode upper portion is larger...

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Bibliographische Detailangaben
Hauptverfasser: LIN, Ko-Wei, CHENG, Chia-Fu, YANG, Chun-Yao, HSU, Chia-Chang, LAI, Kuo-Chih, CHOU, Yi-Syun, KAO, Pei-Hsun, CHEN, Wei
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A magnetoresistive random access memory (MRAM) structure includes a magnetic tunnel junction (MTJ), and a top electrode which contacts an end of the MTJ. The top electrode includes a top electrode upper portion and a top electrode lower portion. The width of the top electrode upper portion is larger than the width of the top electrode lower portion. A bottom electrode contacts another end of the MTJ. The top electrode, the MTJ and the bottom electrode form an MRAM.